Washington-ALsharqiya May 8: Researchers at Cornell University in the United States have developed a technique to change the direction of electron spin in magnetic materials, which may help in the production and development of more energy-efficient magnetic memory devices, and may change the mechanism of computer memories. The researchers published their study in the scientific journal Nature Electronics, in which they referred to the use of spin-borne currents on electrons that exist when electrons spin in one direction. The researchers found that when the spin currents interact with a thin magnetic layer, its angular momentum transfers and generates enough torque to switch the magnetization 180 degrees.
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